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| PD-96992 Rev.A Half-Bridge FredFET and Integrated Driver Description IR3103 Series 0.75A, 500V The IR3103 is a gate driver IC integrated with a half bridge FredFET designed for motor drive applications up to 180W (heatsink-less). The sleek and compact single-in-line package is optimized for electronic motor control in appliance applications such as fans and compressors for refrigerators. The IR3103 offers an extremely compact, high performance half-bridge inverter in a single isolated package for two-phase and three-phase motor drivers. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET(R) power FredFET technology (HEXFET(R) MOSFET with ultra-fast recovery body diode characteristics), enable efficient and rugged single package construction. Propagation delays for the high and low side power FredFETs are matched thanks to advanced IC technology. Features * Output Power FredFET in Half-Bridge Configuration * High Side Gate Drive Designed for Bootstrap Operation * Bootstrap Diode Integrated into Package * Lower Power Level-Shifting Circuit * Lower di/dt Gate Drive for Better Noise Immunity * Excellent Latch Immunity on All Inputs and Outputs * ESD Protection on All Leads * Isolation 1500 VRMS min. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. Power dissipation is measured under board mounted and still air conditions. Parameter VDS VDD IO (TA=25C) IO (TA=55C) IO (TA=25C) Pd VISO TJ TS TL TS Description Drain to Source Blocking Voltage DC Bus Supply Voltage (No Switching Operation) Continuous Output Current (1) Continuous Output Current (1) Pulsed Output Current (2) Package Power Dissipation @TA 55C (3) Isolation Voltage (1min) Junction Temperature (Power MOSFET) Storage Temperature Lead Temperature (soldering, 10 seconds) Storage Temperature Max. Value 500 500 0.7 0.6 2.7 1.4 1500 -40 to +150 -40 to +150 300 -40 to +150 Units V V A A A W VRMS C C C C www.irf.com Note 1: See figure 3, fPWM=16kHz Note 2: TP=100ms, other conditions as per Figure 3, fPWM=16kHz Note 3: Single Device Operating 1 IR3103 Absolute Maximum Ratings (Continued) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. Symbol IBDF VB VO VCC VIN VSS Parameter Bootstrap Continuous Diode Forward Current High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage Low Side and Logic Fixed Supply Voltage Input Voltage LIN, HIN Min --Max 0.3 Units Conditions A TJ = 150C, TA=55C -0.3 525 V VB - 25 VB +0.3 V -0.3 25 V VSS-0.3 VCC-25 VCC+0.3V VCC+0.3V V Logic Ground V Recommended Operating Conditions Driver Function For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS and VO offset are tested with all supplies biased at 15V differential. Symbol VB VDD VCC VIN VSS Definition High Side Floating Supply Absolute Voltage High Voltage Supply Low Side and Logic Fixed Supply Voltage Logic Input Voltage Logic Ground Min VO+10 Note 4 10 VSS -5 Max VO+20 400 20 VCC 5 Units V V V V V Note 4: Logic operation for VO of -5 to +500V. Logic state held for VO of -5V to -VBO. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR3103 Half Bridge Electrical Characteristics @TJ= 25C VCC=VBO=15V and TJ=25C unless otherwise specified. VDD and VIN parameters referenced to COM Symbol V(BR)DSS IHS-LK ILS-LK RDS(ON) VSD RDS(ON) VSD VBDFM EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG COSS COSS eff. SCSOA ISC Parameter Drain-to-Source Breakdown Voltage Low Side Leakage Current Min 500 ----------------------------------------------10 --Typ --5 80 5 100 1.9 0.8 4.3 0.6 ----55 4 59 2 70 85 5 90 6 90 15 12 30 --18.5 Max --50 --105 --2.5 0.9 6.5 0.75 1.25 1.10 75 10 85 5 --115 11 126 11 --21 --------Units Conditions V A VIN=0V, IDD/IO=250A VDS=500V, VIN=0V VDS=500V, VIN=0V, TJ=150C VDS=500V, VIN=0V VDS=500V, VIN=0V, TJ=150C IO = 0.75A, VIN=5V IO = 0.75A, VIN=0V IO = 0.75A, VIN=5V, TJ=150C IO = 0.75A, VIN=0V, TJ=150C IF=1A IF=1A, TJ=125C IDD/IO = 0.75A, VDD=300V, VBO/VCC=15V, L= 6.3mH Low Side Leakage Current Drain-to-Source ON Resistance Diode Forward Voltage Drain-to-Source ON Resistance Diode Forward Voltage Bootstrap Diode Forward Voltage Drop Turn-On Energy Losses Turn-Off Energy Losses Total Energy Losses Body-Diode Reverse Recovery Losses Reverse Recovery Time Turn-On Energy Losses Turn-Off Energy Losses Total Energy Losses Body-Diode Reverse Recovery Losses Reverse Recovery Time Turn-ON MOSFET Gate Charge Output Capacitance Effective Output Capacitance Short Circuit Safe Operating Area Short Circuit Drain Current A V V V J J J J ns J J J J ns nC pF pF s A Energy Losses include Body-Diode Reverse Recovery IDD/IO = 0.75A, VDD=300V, VBO/VCC=15V, L=6.3mH TJ=150C Energy Losses include Body-Diode Reverse Recovery VDD=250V, IO=3.2A. Note 5 VDD=400V, f=1MHz. Note 5 VDD=0V to 400V. Note 5,6 TJ=150C, VP=450V, V+= 320V,VCC=+15V TJ=150C, VP=450V, tSC<10s V+= 320V, VGE=15V, VCC=+15V Note 5: Characterized on FREDFET die level, not measured at EOL Note 6: COSS eff. is a fixed capacitance that gives same charging time as COSS while VDS is rising from 0 to 80% VDSS. www.irf.com 3 IR3103 Thermal Resistance Thermal Resistance is measured under board mounted and still air conditions. Symbol RthJA self RthJA mutual Parameter Self Thermal resistance, junction to ambient (note 7,8) Mutual Thermal resistance, junction to ambient (note 7,8) Min ----Typ ----Max 70 45 Units Conditions C/W No airflow C/W Note 7: under normal operational conditions: both power devices working, no heatsink Note 8: TJ=RthJA_self*PA+RthJA_mutual*PB Static Electrical Characteristics Driver Function VBIAS (VCC, VO)=15V, VSS=COM and TA=25C, unless otherwise specified. VDD and VIN parameters are referenced to COM. Symbol VIN,th VIN,th VCCUV+ VBO VCCUVVBO VCCUVH VBO ILK IQBS IQCC IIN+ IINDefinition Logic "1" Input Voltage Logic "0" Input Voltage VCC and VBO Supply Undervoltage Positive Going Threshold VCC and VBO Supply Undervoltage Negative Going Threshold VCC and VBO Supply Undervoltage Lock-Out Hysteresis Offset Supply Leakage Current Quiescent VBO Supply Current Quiescent VCC Supply current Input Bias Current Input Bias Current Min 2.9 --8.0 7.4 0.3 ----------Typ ----8.9 8.2 0.7 --75 120 5 --Max --0.8 9.8 9.0 --50 130 180 20 2 Units V V V V V A A mA A A VB=VO=600V VIN=0V to 5V VIN=0V to 5V VIN=0V to 5V VIN=0V Conditions Dynamic Electrical Characteristics Driver Function Driver only timing unless otherwise specified. Symbol TON TOFF MT Definition Input to Output Propagation Turnon Delay Time (see fig. 2) Input to Output Propagation Turnoff Delay Time (see fig. 2) Matching Propagation Delay Time (On & Off) Min ------Typ 300 400 0 Max ----30 Units Conditions ns ns ns VCC=VBO= 15V, IO=0.75A, VDD=300V VCC= VBO= 15V 4 www.irf.com IR3103 Pin-Out Description Pin 1 2 3 4 5 6 7 8 9 10 11 Name VCC HIN LIN NC VSS COM NC VB VO NC VDD Description Logic and Internal Gate Drive Supply Logic Input for High Side Gate Output Logic Input For Low Side Gate Output Not Connected Logic Ground Low Side MOSFET Gate Return Not Connected High Side Gate Drive Floating Supply Half Bridge Output Not Connected High Voltage Supply VB 8 11 VDD 1 11 VCC HIN LIN VSS 1 2 3 5 IC Driver 9 Vo HIN 0 1 LIN 1 0 1 X VO 0 VD D Shoot-Through condition X 6 COM 1 X Figure 1: Driver Input/Output relation www.irf.com 5 IR3103 Typical Application Connection IR3103 M V + BUS IR3103 8 VCC HIN LIN VSS 1 2 3 4 6 V-BUS COM IC Driver VBUS 11 VCC 9 HIN LIN VSS IR3103 8 1 2 3 4 6 COM IC Driver VBUS 11 VCC 9 HIN LIN VSS IR3103 8 1 2 3 4 6 COM IC Driver VBUS 11 9 1. Electrolytic bus capacitors should be mounted as close as possible to the module bus terminals to reduce ringing and EMI problems. High frequency ceramic capacitors mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between Vcc-VSS and VB-VO terminals, a capacitor connected between these terminals is recommended and should be located very close to the module pins. Additional high frequency capacitors, typically 0.1mF, are strongly recommended. 3. Low inductance shunt resistor should be used for phase leg current sensing. Similarly, the length of the traces from the pin to the corresponding shunt resistor should be kept as small as possible. 4. Value of the bootstrap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a or Figure 8. 5. Application conditions should guarantee minimum dead-time of 400ns IC VCE VCE HIN/LIN 50% HIN/LIN 90% IC IC 90% IC 50% HIN/LIN 50% VCE 50% VCE 10% IC 10% IC tr HIN/LIN TOFF tf TON Figure 2. TON and TOFF Definitions. 6 www.irf.com IR3103 1.0 Maximum Output Phase Current - A 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 TJ = 150C Trapezoidal Modulation TA = 25C TA = 55C TA = 75C HS LS IO 14 16 18 20 PWM Frequency - kHz Figure 3. Maximum RMS Phase Current vs. PWM Switching Frequency VDD=300V , TJ=150C, Modulation Depth=0.5, PF=0.99 4.0 3.5 HS LS IO TJ = 150C Trapezoidal Modulation IOUT = 0.75 ARMS IOUT = 0.60 ARMS IOUT = 0.45 ARMS Total Power Losses - W 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency - kHz Figure 4. Total Power Losses as Function of Switching Frequency VDD=300V, TJ=150C, Modulation Depth=0.5, PF=0.99 www.irf.com 7 IR3103 10 9 Total Power Losses - W 8 7 6 5 4 3 2 1 0 0.0 0.1 TJ = 150C Trapezoidal Modulation FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz HS LS IO 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Output Phase Current - ARMS Figure 5. Total Power Losses as Function of Output Phase Current VDD=300V, TJ=150C, Modulation Depth=0.5, PF=0.99 Maximum Allowable Ambient Temperature -C 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.1 TJ = 150C Trapezoidal Modulation HS LS IO FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Phase Current - ARMS Figure 6. Maximum Allowable Ambient Temperature vs. Output Phase Current VDD=300V, TJ=150C, Modulation Depth=0.5, PF=0.99 8 www.irf.com IR3103 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -40 -30 -20 -10 RDS(ON) - (Normalized) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 TJ - Junction Temperature (C) Figure 7. Normalized Drain to Source Resistance vs Junction Temperature 10000 1000 RDS(ON) (Normalized) 100 TJ=-40C TJ=25C TJ=150C 10 1 5 6 7 8 9 10 11 12 13 14 15 VGS (V) Figure 8. Normalized Drain to Source Resistance vs Gate Source Voltage www.irf.com 9 IR3103 75.0 70.0 65.0 60.0 55.0 50.0 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 1E-4 Thermal Impedance Zth(J-A) - C/W Zth(J-A) self Zth(J-A) mutual 1E-3 0.01 0.1 1 10 100 1000 10000 Time - s Figure 9. Thermal Impedance vs. Time Recommended Bootstrap Capacitor - F 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 5 10 15 4.7F 3.3F 2.2F 1.0F 6.8F 10F DBS vB +15V HIN LIN VCC HIN LIN VSS VSS LO COM COM HO VS Vo CBS VDD 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency 10 www.irf.com IR3103 Package Outline 27 -A-B3.35 3.15 8.6 -C3.0 2.5 1 11 11.9 MAX 9X 2.54 [0.10] 10X 1.35 1.05 9X 0.65 0.45 0.25 M CASB 1.80 1.20 0.40 0.20 0.25 Note 1: Marking for pin 1 identification Note 2: Product Part Number Note 3: Lot and Date code marking Dimensioning and Tolerancing per ANSY Y14.5M-1992 Controlling Dimensions: INCH Dimensions are shown in millimeters [inches] Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 04/05 www.irf.com 11 |
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